THE FACT ABOUT N TYPE GE THAT NO ONE IS SUGGESTING

s is the fact that of your substrate substance. The lattice mismatch brings about a big buildup of pressure Vitality in Ge levels epitaxially grown on Si. This pressure Vitality is mainly relieved by two mechanisms: (i) technology of lattice dislocations at the interface (misfit dislocations) and (ii) elastic deformation of both equally the substra